2010. 6. 10 1/2 semiconductor technical data mps8050 epitaxial planar npn transistor revision no : 3 high current application. feature h complementary to mps8550. maximum rating (ta=25 ? ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 3. collector 2. base + _ electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =35v, i e =0 - - 100 na emitter cut-off current i ebo v eb =6v, i c =0 - - 100 na collector-base breakdown voltage v (br)cbo i c =100 a, i e =0 40 - - v collector-emitter breakdown voltage v (br)ceo i c =2ma, i b =0 25 - - v dc current gain h fe (1) v ce =1v, i c =5ma 45 135 - h fe (2) (note) v ce =1v, i c =100ma 85 160 300 h fe (3) v ce =1v, i c =800ma 40 110 - collector-emitter saturation voltage v ce(sat) i c =800ma, i b =80ma - 0.28 0.5 v base-emitter saturation voltage v be(sat) i c =800ma, i b =80ma - 0.98 1.2 v base-emitter voltage v be v ce =1v, i c =10ma - 0.66 1.0 v transition frequency f t v ce =10v, i c =50ma 100 190 - mhz collector output capacitance c ob v cb =10v, f=1mhz, i e =0 - 9 - pf characteristic symbol rating unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 6 v collector current i c 1.5 a collector power dissipation p c * 625 mw 400 junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? note : h fe (2) classification b:85 q 160 , c : 120 q 200 , d : 160 q 300 *cu lead-frame : 625mw fe lead-frame : 400mw
2010. 6. 10 2/2 mps8050 revision no : 3 f - i c collector current i (ma) 1 3 10 100 t transition frequency f (mhz) 10 c collector current i (a) 0 0 collector-emitter voltage v (v) ce ce c i - v 0.4 0.8 1.2 1.6 2.0 0.1 0.2 0.3 0.4 0.5 i =3.0ma b t c 300 30 30 50 100 300 v =10v ce i =2.5ma b i =2.0ma b i =1.5ma b i =1.0ma b i =0.5ma b 0.1 collector current i (ma) c base-emitter voltage v (v) be i - v cbe 0 0.2 0.4 0.6 0.8 1.0 1.2 0.3 1 3 10 30 100 0.5 5 50 v =1v ce 550 1 5 10 50 100 10 1 5 50 f=1mhz e i =0 collector output capacitance ob collector-base voltage v (v) cb c - v ob cb c (pf) 3 30 330 saturation voltage be(sat), collector current i (ma) c v v - i be(sat), ce(sat) c v v (mv) ce(sat) 0.1 1 10 1000 100 10000 1 10 100 1000 10000 b i =10i b c v (sat) ce be v (sat) 100 dc current gain h 10 collector current i (ma) 0.1 10 1 1000 100 10000 c 1000 fe h - i fe c v =1v ce
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